View STV270N4F3_4262732.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

STV270N4F3
N-channel 40 V, 1.25 m, 270 A, PowerSO-10 STripFETTM Power MOSFET
Features
Type STV270N4F3 VDSS 40 V RDS(on) max < 1.5 m ID (1) 270 A
10
1. Current limited by package
1
Conduction losses reduced Low profile, very low parasitic inductance
PowerSO-10
Applications
Switching application
Figure 1.
Description
This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique "single feature size" strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge.
Internal schematic diagram and connection diagram (top view)
Table 1.
Device summary
Order code Marking 270N4F3 Package PowerSO-10 Packaging Tape and reel
STV270N4F3
October 2008
Rev 3
1/12
www.st.com 12
Contents
STV270N4F3
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics .................................... 6
3 4 5
Test circuits
.............................................. 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STV270N4F3
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VDS VGS ID (1) ID IDM (1) PTOT (2)
Absolute maximum ratings
Parameter Drain-source voltage (vgs = 0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor Value 40 20 270 220 1080 300 2 1000 -55 to 175 Operating junction temperature Unit V V A A A W W/C mJ C
EAS (3) Tstg Tj
Single pulse avalanche energy Storage temperature
1. Current limited by package 2. This value is rated according to Rthj-c 3. Starting Tj = 25 C, ID = 80 A, VDD = 32 V
Table 3.
Symbol Rthj-case
Thermal data
Parameter Thermal resistance junction-case max Value 0.5 50 Unit C/W C/W
Rthj-pcb (1) Thermal resistance junction-pcb max
1. When mounted on 1 inch2 FR-4 2 oz Cu.
3/12
Electrical characteristics
STV270N4F3
2
Electrical characteristics
(Tcase =25C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On /off states
Parameter Drain-source breakdown voltage Test conditions ID = 250 A, VGS= 0 Min. 40 10 100 200 2 1.25 4 1.5 Typ. Max. Unit V A A nA V m
VDS = Max rating, Zero gate voltage drain current (VGS = 0) VDS = Max rating, Tc=125 C Gate body leakage current (VDS = 0) VDS = 20 V
Gate threshold voltage VDS= VGS, ID = 250 A Static drain-source on resistance VGS= 10 V, ID= 80 A
Table 5.
Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd
1.
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 10 V, ID= 100 A Min. Typ. 200 7500 1900 50 110 30 25 150 Max. Unit S pF pF pF nC nC nC
VDS = 25 V, f = 1 MHz, VGS =0
VDD= 20 V, ID= 160 A, VGS= 10 V (see Figure 14)
Pulsed: Pulse duration = 300 s, duty cycle 1.5%
4/12
STV270N4F3
Electrical characteristics
Table 6.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Test conditions VDD = 20 V, ID = 80 A RG= 4.7 , VGS= 10 V (see Figure 13) VDD = 20 V, ID = 80 A RG= 4.7 , VGS= 10 V, (see Figure 13) Min. Typ. 25 180 Max Unit ns ns
Turn-off delay time Fall time
110 45
ns ns
Table 7.
Symbol ISD ISD
(1)
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, VGS = 0 ISD = 160 A,di/dt = 100 A/s VDD = 32 V, Tj = 150 C (see Figure 15) 70 225 3.2 Test conditions Min. Typ. Max. Unit 270 1080 1.3 A A V ns nC A
VSD (2) trr Qrr IRRM
1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5%
5/12
Electrical characteristics
STV270N4F3
2.1
Figure 2.
ID (A) 10
3
Electrical characteristics
Safe operating area
AM01500v1 Tj=175C Tc=25C Single pulse
Figure 3.
Thermal impedance
102
1
is rea n) sa thi ds(o in R ion ax rat y M pe ed b O it lim
100s 1ms 10ms
10
10 0 10-1 10-1
10
0
10
1
VDS(V)
Figure 4.
Output characteristics
AM01502v1
Figure 5.
Transfer characteristics
AM01503v1
ID(A) 450 400 350 300 250 200 150 100 50 0 0 2
VGS=10V 5V
ID(A) 450 400 350 300 250 200 150 100 4V 50 0 0 2 4 6 8 VGS(V) VDS=5V TC=25C
4
6
VDS(V)
Figure 6.
RDS(on) (m) 1.40
Static drain-source on resistance
AM01501v1
Figure 7.
Normalized BVDSS vs temperature
VGS 10V TC=25C
1.30
1.20
1.10
1.00 0
20
40
60
80 ID(A)
6/12
STV270N4F3 Figure 8. Gate charge vs gate-source voltage Figure 9.
Electrical characteristics Capacitance variations
Figure 10. Normalized gate threshold voltage vs temperature
Figure 11. Normalized on resistance vs temperature
Figure 12. Source-drain diode forward characteristics
7/12
Test circuits
STV270N4F3
3
Test circuits
Figure 14. Gate charge test circuit
VDD 12V
2200
Figure 13. Switching times test circuit for resistive load
47k 100nF
1k
RL VGS VD RG PW D.U.T.
F
3.3 F
VDD Vi=20V=VGMAX
2200 F
IG=CONST 100 2.7k 47k PW 1k
AM01469v1
D.U.T. VG
AM01468v1
Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit
A D G S B 25 D.U.T.
A FAST DIODE B
A L=100H B D G 3.3 F 1000 F
L
VD
2200 F
3.3 F
VDD
VDD
ID
RG
S
Vi
D.U.T.
Pw
AM01470v1 AM01471v1
Figure 17. Unclamped inductive waveform
V(BR)DSS VD
Figure 18. Switching time waveform
ton tdon tr toff tdoff tf
90% IDM
90% 10%
ID VDD VDD
0
10%
VDS 90%
VGS
AM01472v1
0
10%
AM01473v1
8/12
STV270N4F3
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
9/12
Package mechanical data
STV270N4F3
PowerSO-10 MECHANICAL DATA
DIM. MIN. A A1 B C D D1 e E E1 E2 E3 E4 F h H L q 0o 13.80 1.20 1.70 8o 9.30 7.20 7.20 6.10 5.90 1.25 0.50 14.40 1.80 0.543 0.047 0.067 3.35 0.00 0.40 0.35 9.40 7.40 1.27 9.50 7.40 7.60 6.35 6.10 1.35 0.366 0.283 0.283 0.240 0.232 0.049 0.002 0.567 0.071 mm TYP. MAX. 3.65 0.10 0.60 0.55 9.60 7.60 MIN. 0.132 0.000 0.016 0.013 0.370 0.291 0.050 0.374 0.291 0.300 0.250 0.240 0.053 inch TYP. MAX. 0.144 0.004 0.024 0.022 0.378 0.300
B
0.10 A B
10
= =
6
=
=
H
=
E
=
=
E2
E3
E1
=
E4
=
=
A
1
5
=
SEATING PLANE DETAIL "A" Q
e
0.25
M
B
C
h
= A F A1
D = D1 = = SEATING PLANE
=
A1
L DETAIL "A"
0068039-C
10/12
STV270N4F3
Revision history
5
Revision history
Table 8.
Date 25-Oct-2007 03-Apr-2008 01-Oct-2008
Document revision history
Revision 1 2 3 initial release ID value has been updated. Document status promoted from preliminary data to datasheet Changes
11/12
STV270N4F3
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
(c) 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
12/12

▲Up To Search▲

Price & Availability of STV270N4F3

	To Download STV270N4F3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .